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IPB180N03S4L01ATMA1

IPB180N03S4L01ATMA1

IPB180N03S4L01ATMA1

Infineon Technologies

MOSFET N-CH 30V 180A TO263-7-3

SOT-23

IPB180N03S4L01ATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2009
Series OptiMOS™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 188W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.05m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 140μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 17600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 239nC @ 10V
Rise Time5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 57 ns
Continuous Drain Current (ID) 180A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage30V
Drain-source On Resistance-Max 0.00105Ohm
Avalanche Energy Rating (Eas) 530 mJ
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:3857 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.112558$1.112558
10$1.049582$10.49582
100$0.990172$99.0172
500$0.934125$467.0625
1000$0.881250$881.25

About IPB180N03S4L01ATMA1

The IPB180N03S4L01ATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 180A TO263-7-3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPB180N03S4L01ATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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