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IXTA14N60P

IXTA14N60P

IXTA14N60P

IXYS

MOSFET N-CH 600V 14A D2-PAK

SOT-23

IXTA14N60P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 28 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2009
Series PolarHV™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating14A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 550m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time27ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Polarity/Channel Type P-CHANNEL
Fall Time (Typ) 26 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.55Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 42A
Avalanche Energy Rating (Eas) 900 mJ
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1743 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$18.864800$18.8648
10$17.796981$177.96981
100$16.789605$1678.9605
500$15.839250$7919.625
1000$14.942689$14942.689

About IXTA14N60P

The IXTA14N60P from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 600V 14A D2-PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTA14N60P, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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