Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IPA60R950C6XKSA1

IPA60R950C6XKSA1

IPA60R950C6XKSA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 950m Ω @ 1.5A, 10V ±20V 280pF @ 100V 13nC @ 10V TO-220-3 Full Pack

SOT-23

IPA60R950C6XKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 26 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series CoolMOS™
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 26W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation26W
Case Connection ISOLATED
Turn On Delay Time10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 950m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 130μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4.4A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 4.4A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage600V
Drain-source On Resistance-Max 0.95Ohm
Avalanche Energy Rating (Eas) 46 mJ
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3230 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.56000$1.56
10$1.39600$13.96
100$1.11860$111.86
500$0.88396$441.98

IPA60R950C6XKSA1 Product Details

IPA60R950C6XKSA1 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 46 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 280pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4.4A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 60 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 600V.Using drive voltage (10V) reduces this device's overall power consumption.

IPA60R950C6XKSA1 Features


the avalanche energy rating (Eas) is 46 mJ
a continuous drain current (ID) of 4.4A
the turn-off delay time is 60 ns


IPA60R950C6XKSA1 Applications


There are a lot of Infineon Technologies
IPA60R950C6XKSA1 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

Get Subscriber

Enter Your Email Address, Get the Latest News