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NDB6030PL

NDB6030PL

NDB6030PL

ON Semiconductor

NDB6030PL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NDB6030PL Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature-65°C~175°C TJ
PackagingTape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 25mOhm
Subcategory Other Transistors
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Current Rating-30A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 75W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation75W
Case Connection DRAIN
Turn On Delay Time12.5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 15V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 5V
Rise Time60ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 52 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) -30A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 90A
Height 11.33mm
Length 10.67mm
Width 4.83mm
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:8869 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.90000$0.9
500$0.891$445.5
1000$0.882$882
1500$0.873$1309.5
2000$0.864$1728
2500$0.855$2137.5

NDB6030PL Product Details

NDB6030PL Description


NDB6030PL is a type of P-channel logic-level enhancement-mode field-effect transistor provided by ON Semiconductor based on its proprietary, high cell density, DMOS technology which makes this device capable of minimizing on-state resistance. It is well suited for low-voltage applications including DC/DC converters and high-efficiency switching circuits requiring low in-line power loss and resistance to transients.



NDB6030PL Features


  • Proprietary, high cell density, DMOS technology

  • Low RDS (on)

  • High-density cell design

  • Low on-state resistance

  • Available in the TO-263AB package



NDB6030PL Applications


  • DC/DC converters

  • High-efficiency switching circuits


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