IGB15N65S5ATMA1 Description
The fundamental function of the IGBT is rather simple. A positive voltage UGE from gate to emitter turns on the MOSFET. Then, the voltage connected to the collector can drive the base current through the bipolar transistor and the MOSFET; the bipolar transistor turns on and the load current can flow.
IGB15N65S5ATMA1 Applications
?EnergyGeneration
-SolarStringInverter
-SolarMicroInverter
?IndustrialPowerSupplies
-IndustrialSMPS
-IndustrialUPS
?MetalTreatment
-Welding
?EnergyDistribution
-EnergyStorage
?Infrastructure–Charge
-Charger
IGB15N65S5ATMA1 Features
HighspeedS5technologyoffering
?Highspeedsmoothswitchingdeviceforhard&softswitching
?VeryLowVCEsat,1.35Vatnominalcurrent
?PlugandplayreplacementofpreviousgenerationIGBTs
?650Vbreakdownvoltage
?LowQG
?Maximumjunctiontemperature175°C
?Pb-freeleadplating;RoHScompliant
