IXGH90N60B3 Description
IXYS extends its GenX3TM insulated gate bipolar transistor (IGBT) product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM IGBT process and utilize IXYS’ advanced Punch-Though (PT) technology, tailored to provide higher surge current capabilities, lower saturation voltages, and lower switching losses.
IXGH90N60B3 Features
Optimized for low switching &
conduction losses
Square RBSOA
High current handling capability
International standard packages
IXGH90N60B3 Applications
Power inverters
Uninterruptible power supplies
Motor drives
Switch mode power supplies
Power factor correction circuits
Welding machines
Lamp ballasts
