IRG7PH42UD2-EP Description
IRG7PH42UD2-EP is a 1200V insulated gate bipolar transistor with an ultra-low VF diode for induction heating and soft switching applications. The Infineon IRG7PH42UD2-EP has high efficiency due to Low VCE(on), Low Switching Losses, and Ultra-low VF. The Operating and Storage Temperature Range is between -55 and 150℃. And the Amplifier IRG7PH42UD2-EP is in the TO-247ADpackage with 321W power dissipation.
IRG7PH42UD2-EP Features
Low VcE (ON) Trench IGBT Technology
Low Switching Losses
Square RBSOA
100% of the parts tested for 4X rated current (L .M)
Positive VCE (ON) Temperature coefficient
Ultra-low VF Diode
Tight parameter distribution
Lead-Free Package
IRG7PH42UD2-EP Applications
Automotive
Hybrid, electric & powertrain systems
Enterprise systems
Enterprise projectors
Personal electronics
Home theater & entertainment
