Name: STGP6NC60H
Brand: STMicroelectronics
SKU: STGP6NC60H
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	56W
Base Part Number	STGP6
Pin Count	3
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	7A
Reverse Recovery Time	21ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Current - Collector (Ic) (Max)	15A
Turn On Time	17.3 ns
Test Condition	390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 3A
Turn Off Time-Nom (toff)	222 ns
Gate Charge	13.6nC
Current - Collector Pulsed (Icm)	21A
Td (on/off) @ 25°C	12ns/76ns
Switching Energy	20μJ (on), 68μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

STGP6NC60H Product Details

STGP6NC60H Description

STGP6NC60H is a 600v N-channel Very fast PowerMESH? IGBT. Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high-frequency application in order to achieve very high switching performances (reduced fall) maintaining a low voltage drop.