IXFR180N10 Description
IXFR180N10 is a HiPerFETTM Power MOSFET. The Operating and Storage Temperature Range is between -55 and +150℃. And the regulator IXFR180N10 in the TO-247-3 package with 400W Power Dissipation. The Power MOSFET IXFR180N10 can be applied in DC-DC converters, Battery chargers, Switched-mode and resonant-mode power supplies, DC choppers, and AC motor control applications.
IXFR180N10 Features
Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<25pF)
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS) rated
Fast intrinsic Rectifier
IXFR180N10 Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode power supplies
DC choppers
AC motor control
