Description
The ISL9N302AS3ST is an N-Channel Logic Level PWM Optimized UltraFET? Trench Power MOSFETs. This device has a brand-new, cutting-edge trench MOSFET design and has a low gate charge while yet having a low on-resistance. This device, which has been tailored for switching applications, increases the overall effectiveness of DC/DC converters and enables operation at greater switching frequencies.
Features
Qg (Typ) = 110nC, VGS = 5V
Qgd (Typ) = 31nC
CISS (Typ) = 11000pF
Fast switching
rDS(ON) = 0.0019? (Typ), VGS = 10V
rDS(ON) = 0.0027? (Typ), VGS = 4.5V
Applications
