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IXFN120N20

IXFN120N20

IXFN120N20

IXYS

MOSFET N-CH 200V 120A SOT-227B

SOT-23

IXFN120N20 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2003
Series HiPerFET™
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 4
ECCN Code EAR99
Resistance 17MOhm
Terminal Finish Nickel (Ni)
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal FormUNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating120A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PUFM-X4
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 600W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation600W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V
Rise Time55ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 120A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 480A
Dual Supply Voltage 200V
Recovery Time 250 ns
Nominal Vgs 4 V
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:341 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$204.846147$204.846147
10$193.251083$1932.51083
100$182.312342$18231.2342
500$171.992775$85996.3875
1000$162.257336$162257.336

About IXFN120N20

The IXFN120N20 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 200V 120A SOT-227B.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXFN120N20, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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