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IXFQ120N25X3

IXFQ120N25X3

IXFQ120N25X3

IXYS

MOSFET (Metal Oxide) N-Channel Tube 12m Ω @ 60A, 10V ±20V 7870pF @ 25V 122nC @ 10V 250V TO-3P-3, SC-65-3

SOT-23

IXFQ120N25X3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Operating Temperature-55°C~150°C TJ
PackagingTube
Series HiPerFET™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 520W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 7870pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 122nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:539 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$10.031000$10.031
10$9.463208$94.63208
100$8.927554$892.7554
500$8.422221$4211.1105
1000$7.945492$7945.492

IXFQ120N25X3 Product Details

IXFQ120N25X3 Overview


A device's maximal input capacitance is 7870pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFQ120N25X3 Features


a 250V drain to source voltage (Vdss)


IXFQ120N25X3 Applications


There are a lot of IXYS
IXFQ120N25X3 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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