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IPT012N08N5ATMA1

IPT012N08N5ATMA1

IPT012N08N5ATMA1

Infineon Technologies

IPT012N08N5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IPT012N08N5ATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerSFN
Number of Pins 8
Transistor Element Material SILICON
Manufacturer Package Identifier PG-HSOF-8
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2013
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal FormFLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-F2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 375W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation375W
Case Connection DRAIN
Turn On Delay Time35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2m Ω @ 150A, 10V
Vgs(th) (Max) @ Id 3.8V @ 280μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 17000pF @ 40V
Current - Continuous Drain (Id) @ 25°C 300A Tc
Gate Charge (Qg) (Max) @ Vgs 223nC @ 10V
Rise Time31ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 82 ns
Continuous Drain Current (ID) 300A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage80V
Drain Current-Max (Abs) (ID) 52A
Drain to Source Breakdown Voltage 80V
Max Junction Temperature (Tj) 175°C
Height 2.4mm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:924 items

Pricing & Ordering

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IPT012N08N5ATMA1 Product Details

IPT012N08N5ATMA1 Description

The VN750 is a monolithic device designed using STMicroelectronic? VIPower? M0-3 technology. The VN750 is intended for driving any type of load with one side connected to the ground.



IPT012N08N5ATMA1 Features

CMOS compatible input

On-state open-load detection

Off-state open-load detection

Shorted load protection

Undervoltage and overvoltage shutdown

Protection against loss of ground

Very low standby current

Reverse battery protection


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