Name: FCD4N60TM
Brand: ON Semiconductor
SKU: FCD4N60TM
Price: 1.41000 USD
Availability: InStock

new-10%

FCD4N60TM

Manufacturer part number:FCD4N60TM

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.2 Ω @ 2A, 10V ±30V 540pF @ 25V 16.6nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

Case Package:SOT-23

Datasheet:FCD4N60TM Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Factory Lead Time	13 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	SuperFET™
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	1.2Ohm
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	3.9A
Base Part Number	FCD4N60
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	50W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	50W
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.2 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	540pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.9A Tc
Gate Charge (Qg) (Max) @ Vgs	16.6nC @ 10V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	36 ns
Continuous Drain Current (ID)	3.9A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Dual Supply Voltage	600V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	5 V
Height	2.517mm
Length	6.73mm
Width	6.22mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FCD4N60TM Product Details

FCD4N60TM Description

The FCD4N60TM is an N-channel SuperFET? high voltage super-junction MOSFET utilizing charge balance technology for outstanding low ON-resistance and lower gate charge performance. The onsemi FCD4N60TM is tailored to minimize conduction loss and provide superior switching performance, dV/dt rate, and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.