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IXFH150N30X3

IXFH150N30X3

IXFH150N30X3

IXYS

MOSFET (Metal Oxide) N-Channel Tube 8.3m Ω @ 75A, 10V ±20V 13.1nF @ 25V 254nC @ 10V 300V TO-247-3

SOT-23

IXFH150N30X3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-55°C~150°C TJ
PackagingTube
Series HiPerFET™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 890W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.3m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 13.1nF @ 25V
Current - Continuous Drain (Id) @ 25°C 150A Tc
Gate Charge (Qg) (Max) @ Vgs 254nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:445 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$14.81000$14.81
30$12.45067$373.5201
120$11.44100$1372.92
510$9.75851$4976.8401

IXFH150N30X3 Product Details

IXFH150N30X3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 13.1nF @ 25V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFH150N30X3 Features


a 300V drain to source voltage (Vdss)


IXFH150N30X3 Applications


There are a lot of IXYS
IXFH150N30X3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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