IRFS450B Description
ON Semiconductor's IRFS450B is an N-Channel enhancement mode power field effect transistor with a voltage of 500V. The IRFS450B has a working temperature of -55°C to 150°C TJ and maximum power dissipation of 96W. Fairchild's unique planar DMOS technology is used to make these N-Channel enhancement mode power field-effect transistors. In the avalanche and commutation modes, this innovative technology has been specifically tuned to minimize on-state resistance, provide improved switching performance, and withstand high-energy pulses. The IRFS450B is ideal for high-efficiency switch mode power supply, power factor correction, and half-bridge electronic light ballasts.
IRFS450B Features
9.6A, 500V, RDS(on) = 0.39? @VGS = 10 V
Low gate charge ( typical 87 nC)
Low Crss ( typical 60 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
IRFS450B Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
