Name: FDPF16N50UT
Brand: ON Semiconductor
SKU: FDPF16N50UT
Price: 1.23000 USD
Availability: InStock

new-10%

FDPF16N50UT

Manufacturer part number:FDPF16N50UT

Manufacturer:ON Semiconductor

Description:FDPF16N50UT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDPF16N50UT Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.27g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Series	UniFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	38.5W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	38.5W
Case Connection	ISOLATED
Turn On Delay Time	40 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	480m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1945pF @ 25V
Current - Continuous Drain (Id) @ 25°C	15A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	150ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	80 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	15A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.48Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	60A
Height	16.07mm
Length	10.36mm
Width	4.9mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FDPF16N50UT Product Details

FDPF16N50UT Description

N-channel UniFET? ultra FRFET? MOSFET FDPF16N50UT belongs to the family of high-voltage MOSFET family provided by ON Semiconductor based on the planar stripe and DMOS technology. It is specifically designed to provide lower on-state resistance, better switching performance, and higher avalanche energy strength. Due to its reliable performance, it is well suited for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.