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IXBF20N360

IXBF20N360

IXBF20N360

IXYS

IGBT Transistors 3600V/45A Reverse Conducting IGBT

SOT-23

IXBF20N360 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case i4-Pac™-5
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2013
Series BIMOSFET™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation230W
Reach Compliance Code unknown
Input Type Standard
Power - Max 230W
Collector Emitter Voltage (VCEO) 3.4V
Max Collector Current 45A
Reverse Recovery Time 1.7 μs
Collector Emitter Breakdown Voltage3.6kV
Voltage - Collector Emitter Breakdown (Max) 3600V
Test Condition 1500V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 20A
Gate Charge43nC
Current - Collector Pulsed (Icm) 220A
Td (on/off) @ 25°C 18ns/238ns
Switching Energy 15.5mJ (on), 4.3mJ (off)
RoHS StatusROHS3 Compliant
In-Stock:168 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$50.12000$50.12
10$46.86600$468.66
25$43.34400$1083.6
100$40.63500$4063.5
250$37.92600$9481.5

About IXBF20N360

The IXBF20N360 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features IGBT Transistors 3600V/45A Reverse Conducting IGBT.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXBF20N360, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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