STGWA60V60DF Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
STGWA60V60DF Features
? Maximum junction temperature: TJ = 175 °C
? Tail-less switching off
? VCE(sat) = 1.85 V (typ.) @ IC = 60 A
? Tight parameter distribution
? Safe paralleling
? Low thermal resistance
? Very fast soft recovery antiparallel diode
STGWA60V60DF Applications
? Photovoltaic inverters
? Uninterruptible power supply
? Welding
? Power factor correction
? Very high frequency converters
