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BG 3123R E6327

BG 3123R E6327

BG 3123R E6327

Infineon Technologies AG

BG 3123R E6327 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Infineon Technologies AG stock available on our website

SOT-23

BG 3123R E6327 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Surface MountYES
Number of Pins 6
Weight 6.010099 mg
ECCN (US) EAR99
Channel Mode Depletion
Number of Elements per Chip 2
Maximum Drain Source Voltage (V) 8
Maximum Gate Source Voltage (V) ±6
Maximum Continuous Drain Current (A) 0.025
Typical Input Capacitance @ Vds (pF) 1.5@5V@Gate 1@Amp B|1.9@5V@Gate 1@Amp A
Typical Forward Transconductance (S) 0.3
Maximum Power Dissipation (mW) 200
Typical Power Gain (dB) 32@Amp A|30@Amp B
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
AEC Qualified Yes
AEC Qualified Number AEC-Q101
Standard Package Name SOT-26
Supplier Package SOT-363
Military No
Mounting Surface Mount
Package Height 0.9(Max)
Package Length 2
Package Width 1.25
PCB changed 6
Lead Shape Gull-wing
Voltage Rating (DC) 8 V
RoHS Compliant
Manufacturer Infineon Technologies AG
PackagingTape and Reel
Part StatusObsolete
ECCN Code EAR99
Max Operating Temperature150 °C
Min Operating Temperature -55 °C
Subcategory FET General Purpose Power
Max Power Dissipation200 mW
Reach Compliance Code unknown
Current Rating20 mA
Frequency 800 MHz
Pin Count6
Number of Elements 2
Configuration Dual
Element ConfigurationDual
Operating ModeDUAL GATE, ENHANCEMENT MODE
Test Current 14 mA
Drain to Source Voltage (Vdss) 8 V
Polarity/Channel Type N-CHANNEL
Continuous Drain Current (ID) 25 mA
Gate to Source Voltage (Vgs) 6 V
Gain 25 dB
Drain Current-Max (Abs) (ID) 0.02 A
Input Capacitance1.9 pF
Channel Type N
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.2 W
Noise Figure1.8 dB
Test Voltage 5 V
Voltage Rating8 V
Width 1.25 mm
Height 900 µm
Length 2 mm
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2667 items

About BG 3123R E6327

The BG 3123R E6327 from Infineon Technologies AG is a high-performance microcontroller designed for a wide range of embedded applications. This component features BG 3123R E6327 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Infineon Technologies AG stock available on our website.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the BG 3123R E6327, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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