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MRF1511NT1

MRF1511NT1

MRF1511NT1

NXP USA Inc.

MRF1511NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

MRF1511NT1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Package / Case PLD-1.5
Surface MountYES
Transistor Element Material SILICON
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e3
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated 40V
HTS Code8541.29.00.75
Subcategory FET General Purpose Power
Current Rating (Amps) 4A
Terminal Position QUAD
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) 260
Frequency 175MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MRF1511
JESD-30 Code R-PQSO-N4
Qualification StatusNot Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Operating ModeENHANCEMENT MODE
Case Connection SOURCE
Current - Test 150mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 13dB
Drain Current-Max (Abs) (ID) 4A
DS Breakdown Voltage-Min 40V
Power - Output 8W
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 62.5W
Voltage - Test 7.5V
RoHS StatusROHS3 Compliant
In-Stock:2488 items

Pricing & Ordering

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MRF1511NT1 Product Details

MRF1511NT1 Description

MRF1511NT1 is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MRF1511NT1 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF1511NT1 has the common source configuration.

MRF1511NT1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging for lower junction temperatures

MRF1511NT1 Applications

ISM applications

DC large signal applications


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