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SPP20N60C3XKSA1

SPP20N60C3XKSA1

SPP20N60C3XKSA1

Infineon Technologies

SPP20N60C3XKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

SPP20N60C3XKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package PG-TO220-3-1
Weight 45.359237g
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2005
Series CoolMOS™
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Max Operating Temperature150°C
Min Operating Temperature -55°C
Voltage - Rated DC 650V
Technology MOSFET (Metal Oxide)
Current Rating20.7A
Power Dissipation-Max 208W Tc
Element ConfigurationSingle
Power Dissipation208W
Turn On Delay Time10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20.7A Tc
Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V
Rise Time5ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.5 ns
Turn-Off Delay Time 67 ns
Continuous Drain Current (ID) 20.7A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Dual Supply Voltage 650V
Input Capacitance2.4nF
Drain to Source Resistance 190mOhm
Rds On Max 190 mΩ
Nominal Vgs 3 V
Height 9.25mm
Length 10mm
Width 4.4mm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1018 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.82000$5.82
50$4.73840$236.92
100$4.34720$434.72
500$3.58444$1792.22

SPP20N60C3XKSA1 Product Details

SPP20N60C3XKSA1 MOSFET Description


The industry is familiar with Infineon's CoolMOSTM super junction MOSFET technology, which stands out for its excellent quality and dependability. Over the past few years, the quality has been demonstrated by the billions of devices sold with continuously improving DPM of less than 0.05 DPM. Regarding dependability, the same performance has been demonstrated to be accurate to less than 0.1 FIT over 175 million device hours. With its design-for-quality program and ongoing manufacturing improvement, Infineon has always taken solid, tested steps. To achieve this, teams from technology, design, quality, reliability, and manufacturing work together continuously and pro-actively. Above the fact that all Infineon facilities have ISO/TS16949 certification, this endeavor goes above and beyond.



SPP20N60C3XKSA1 MOSFET Features


New revolutionary high voltage technology

Worldwide best Rps(on) in TO-220

Ultra-low gate charge

Periodic avalanche rated

Extreme dv/dt rated

High peak current capability

Improved transconductance

PG-T0-220-3-31: Fully isolated package (2500 VAC; 1min)

Pb-free lead plating; RoHS compliant

Qualified according to JEDEC0 for target applications



SPP20N60C3XKSA1 MOSFET Applications


Server

PC Power

Solar Inverters

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LED Lighting

Home Appliance Drivers


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