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SPD30P06PGBTMA1

SPD30P06PGBTMA1

SPD30P06PGBTMA1

Infineon Technologies

SPD30P06PGBTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

SPD30P06PGBTMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 1999
Series SIPMOS®
JESD-609 Code e3
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureAVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 125W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation125W
Case Connection DRAIN
Turn On Delay Time13 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 75m Ω @ 21.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1.7mA
Halogen Free Not Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1535pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time11ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage-60V
Drain-source On Resistance-Max 0.075Ohm
Avalanche Energy Rating (Eas) 250 mJ
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:3342 items

Pricing & Ordering

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SPD30P06PGBTMA1 Product Details

SPD30P06PGBTMA1 Description


SPD30P06PGBTMA1 is a P-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 60V. The operating temperature of SPD30P06PGBTMA1 is -55°C~175°C TJ and its maximum power dissipation is 125W. SPD30P06PGBTMA1 has 3 pins and it is available in Tape & Reel (TR) packaging way. The Turn-On Delay Time of SPD30P06PGBTMA1 is 13 ns and its Turn-Off Delay Time is 30 ns.



SPD30P06PGBTMA1 Features


  • P-Channel

  • Enhancement mode

  • Avalanche rated

  • dv/dt rated

  • 175°C operating temperature



SPD30P06PGBTMA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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