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IXFK20N120P

IXFK20N120P

IXFK20N120P

IXYS

MOSFET N-CH 1200V 20A TO-264

SOT-23

IXFK20N120P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2008
Series HiPerFET™, PolarP2™
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 780W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation780W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 570m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 11100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 193nC @ 10V
Rise Time45ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.57Ohm
Drain to Source Breakdown Voltage 1.2kV
Pulsed Drain Current-Max (IDM) 50A
Avalanche Energy Rating (Eas) 1000 mJ
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:273 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$28.541479$28.541479
10$26.925924$269.25924
100$25.401815$2540.1815
500$23.963976$11981.988
1000$22.607525$22607.525

About IXFK20N120P

The IXFK20N120P from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 1200V 20A TO-264.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXFK20N120P, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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