Utilizing the cutting-edge PowerTrench? method, this N-Channel MOSFET was created. The lowest rDS(on) while maintaining outstanding switching performance has been achieved by combining advancements in both silicon and Dual CoolTM package technologies. This is made possible by the incredibly low Junction-to-Ambient thermal resistance.
FDMT80080DC Features
Max rDS(on) = 1.35 m|? at VGS = 10 V, ID = 36 A
Max rDS(on) = 1.82 m|? at VGS = 8 V, ID = 31 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
Low profile 8x8mm MLP package
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMT80080DC Applications
Oring FET / Load Switch
Synchronous Rectification
DC-DC Conversion
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