IRG4RC10KPBF Description
An INSULATED GATE BIPOLAR TRANSISTOR is IRG4RC10KPBF.
IRG4RC10KPBF Features
? Short Circuit Rated UltraFast: Designed for high operating frequencies >5.0 kHz and short circuit rated to 10 s at 125 °C, VGE = 15 volts.
? The Generation 4 IGBT design is more efficient than the Generation 3 design.
? TO-252AA packaging, a common form factor
? Free of lead
IRG4RC10KPBF Applications
Switching applications
