IRG4CC80UD Features
UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
IGBT co-packaged with HEXFRED9 ultrafast, ultra-soft-recovery ani-parallel diodes for use in bridge configurations
Industry-standard TO-220AB package
Lead-Free
IRG4CC80UD Benefits
Generation -4 IGBTs offer the highest efficiencies available
IGBTs optimized for specific application conditions
HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/mo snubbing
Designed to be a "drop-in" replacement for equivalent industry-standard Generation3 IR IGBTs
