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SIGC15T60EX1SA1

SIGC15T60EX1SA1

SIGC15T60EX1SA1

Infineon Technologies

SIGC15T60EX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC15T60EX1SA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case Die
Surface MountYES
Operating Temperature-40°C~175°C TJ
Published 2010
Series TrenchStop™
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 30A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 90A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS StatusROHS3 Compliant
In-Stock:4740 items

SIGC15T60EX1SA1 Product Details

SIGC15T60EX1SA1 Description


SIGC15T60EX1SA1 belongs to the family of TRENCHSTOP? IGBT3 chips provided by Infineon Technologies. It is designed based on 600V trench & field stop technology to realize low turn-out losses, short tail current, positive temperature coefficient, and easy paralleling. It combines the advantages of power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.



SIGC15T60EX1SA1 Features


Low turn-out losses

Short tail current

Positive temperature coefficient

Easy paralleling



SIGC15T60EX1SA1 Applications


Drives

White goods

Resonant applications


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