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SIGC14T60SNCX1SA5

SIGC14T60SNCX1SA5

SIGC14T60SNCX1SA5

Infineon Technologies

SIGC14T60SNCX1SA5 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC14T60SNCX1SA5 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case Die
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
Published 2016
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Position UPPER
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count2
JESD-30 Code S-XUUC-N2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Dual Supply Voltage600V
Current - Collector (Ic) (Max) 15A
Turn On Time54 ns
Test Condition 400V, 15A, 21 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 15A
Turn Off Time-Nom (toff) 315 ns
IGBT Type NPT
Current - Collector Pulsed (Icm) 45A
Td (on/off) @ 25°C 31ns/261ns
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4386 items

SIGC14T60SNCX1SA5 Product Details

SIGC14T60SNCX1SA5 Description


SIGC14T60SNCX1SA5 belongs to the family of IGBT chips provided by Infineon Technologies. It is designed based on 600V NPT technology to realize a positive temperature coefficient, and easy paralleling. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.



SIGC14T60SNCX1SA5 Features


600V NPT technology

100μm chip

Positive temperature coefficient

Easy paralleling

Package: sawn on foil



SIGC14T60SNCX1SA5 Applications


Drives


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