IRGC35B60PB Description
IRGC35B60PB is a 600v IGBT Die in wafer form. The Infineon IRGC35B60PB is suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses. It is applied to many fields, like Communications equipment, Broadband fixed line access, Enterprise systems, Enterprise projectors, Personal electronics, and Portable electronics. And the main parameter of this part is Trans IGBT Chip 600V 4A Die on Film/Wafe. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).
IRGC35B60PB Features
100% Tested at Probe
Available in Chip Pack, Unsawn wafer, Sawn on Film
Low VCE (on) Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5μs SCSOA
Square RBSOA
Positive VCE (on) Temperature Coefficient.
Tighter Distribution of Parameters
IRGC35B60PB Applications
Communications equipment
Broadband fixed line access
Enterprise systems
Enterprise projectors
Personal electronics
Portable electronics
