IRG4CC30FB datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4CC30FB Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Die
Surface Mount
YES
Transistor Element Material
SILICON
JESD-609 Code
e0
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
FAST SPEED
Subcategory
Insulated Gate BIP Transistors
Terminal Position
UPPER
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUUC-N2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Input Type
Standard
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Voltage - Collector Emitter Breakdown (Max)
600V
Vce(on) (Max) @ Vge, Ic
1.7V @ 15V, 6A
Gate-Emitter Thr Voltage-Max
6V
RoHS Status
ROHS3 Compliant
In-Stock:1416 items
IRG4CC30FB Product Details
IRG4CC30FB Description
The IRG4CC30FB is an IGBT Die in Wafer Form. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate, and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.
IRG4CC30FB Features
600 V
Size 3
Fast Speed
6" Wafer
IRG4CC30FB Applications
Consumer electronics
Industrial technology
The energy sector
Aerospace electronic devices
Transportation
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