SIGC14T60NCX1SA6 Description
SIGC14T60NCX1SA6 belongs to the family of insulated gate bipolar transistors provided by Infineon Technologies. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of power transistor (Giant Transistor-GTR) and power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.
SIGC14T60NCX1SA6 Features
600V NPT technology
100μm chip
positive temperature coefficient
easy paralleling
Package: sawn on foil
SIGC14T60NCX1SA6 Applications
Drives
