SIGC121T60NR2CX7SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
SIGC121T60NR2CX7SA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-55°C~150°C TJ
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
150A
Test Condition
300V, 150A, 1.5Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 150A
IGBT Type
NPT
Current - Collector Pulsed (Icm)
450A
Td (on/off) @ 25°C
125ns/225ns
RoHS Status
ROHS3 Compliant
In-Stock:2606 items
SIGC121T60NR2CX7SA1 Product Details
SIGC121T60NR2CX7SA1 Description
SIGC121T60NR2CX7SA1 is a single IGBT with a break down voltage of 600V from Infineon Technologies. SIGC121T60NR2CX7SA1 operates between -55°C~150°C TJ, and its maximum collector current is 150A. The SIGC121T60NR2CX7SA1 has three pins and it is available in Die packaging way. SIGC121T60NR2CX7SA1 has a 600V Voltage - Collector Emitter Breakdown (Max) value.
SIGC121T60NR2CX7SA1 Features
600V NPT technology 100μm chip
positive temperature coefficient
easy paralleling
integrated gate resistor
SIGC121T60NR2CX7SA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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