IRG8CH50K10F Description
IRG8CH50K10F is a 1200v insulated gate bipolar transistor. The Infineon IRG8CH50K10F provides high efficiency in a wide range of applications and is suitable for a wide range of switching frequencies. The IRG8CH50K10F is designed for a wide range of applications, such as Industrial Motor Drives, UPS, HEV inverters, and Welding. The Operating and Storage Temperature Range is between -40 and 175℃.
IRG8CH50K10F Features
Low VcE(on) Trench IGBT Technology
Low Switching Losses
Very Soft Turn-off Characteristics
10μs Short Circuit SOA
Square RBSOA
Tight Parameter Distribution
Positive VcE(on) Temperature Coefficient
TJ(max)= 175°C
IRG8CH50K10F Applications
Industrial Motor Drives
UPS
HEV Inverter
Welding
