SIGC07T60SNCX1SA4 Description
SIGC07T60SNCX1SA4 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC07T60SNCX1SA4 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies SIGC07T60SNCX1SA4 has the common source configuration.
SIGC07T60SNCX1SA4 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
SIGC07T60SNCX1SA4 Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
