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SIGC07T60NCX1SA4

SIGC07T60NCX1SA4

SIGC07T60NCX1SA4

Infineon Technologies

SIGC07T60NCX1SA4 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC07T60NCX1SA4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature-55°C~150°C TJ
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 6A
Test Condition 300V, 6A, 54Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 6A
IGBT Type NPT
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 21ns/110ns
RoHS StatusROHS3 Compliant
In-Stock:1240 items

SIGC07T60NCX1SA4 Product Details

SIGC07T60NCX1SA4 Description

SIGC07T60NCX1SA4 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC07T60NCX1SA4 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

SIGC07T60NCX1SA4 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

SIGC07T60NCX1SA4 Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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