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PTFB193408SVV1XWSA1

PTFB193408SVV1XWSA1

PTFB193408SVV1XWSA1

Infineon Technologies

IC FET RF LDMOS H-34275G-6/2

SOT-23

PTFB193408SVV1XWSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case H-34275G-6/2
Surface MountYES
Transistor Element Material SILICON
PackagingTray
Published 2015
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Voltage - Rated 65V
Terminal Position QUAD
Terminal FormUNSPECIFIED
Reach Compliance Code unknown
Frequency 1.99GHz
JESD-30 Code R-CQSO-X6
Operating Temperature (Max) 200°C
Operating Supply Voltage30V
Number of Elements 2
Configuration COMMON SOURCE, 2 ELEMENTS
Operating ModeENHANCEMENT MODE
Current - Test 2.65A
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual), Common Source
Gain 19dB
DS Breakdown Voltage-Min 65V
Power - Output 80W
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3545 items

About PTFB193408SVV1XWSA1

The PTFB193408SVV1XWSA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features IC FET RF LDMOS H-34275G-6/2.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the PTFB193408SVV1XWSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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