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AFT20P140-4WGNR3

AFT20P140-4WGNR3

AFT20P140-4WGNR3

NXP USA Inc.

RF MOSFET Transistors 1880-2025 MHz 24 W Avg. 28 V

SOT-23

AFT20P140-4WGNR3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Package / Case OM-780G-4L
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Terminal Finish TIN
Voltage - Rated 65V
HTS Code8541.29.00.75
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Frequency 1.88GHz~1.91GHz
[email protected] Reflow Temperature-Max (s) 40
Operating Temperature (Max) 125°C
Configuration Single
Current - Test 500mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual)
Gain 17.8dB
Power - Output 24W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS StatusROHS3 Compliant
In-Stock:3518 items

Pricing & Ordering

QuantityUnit PriceExt. Price
250$62.98732$15746.83

About AFT20P140-4WGNR3

The AFT20P140-4WGNR3 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF MOSFET Transistors 1880-2025 MHz 24 W Avg. 28 V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the AFT20P140-4WGNR3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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