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PTFA261702E V1

PTFA261702E V1

PTFA261702E V1

Infineon Technologies

IC FET RF LDMOS 170W H-30275-4

SOT-23

PTFA261702E V1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case 2-Flatpack, Fin Leads
PackagingTray
Published 2009
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Voltage - Rated 65V
Subcategory FET General Purpose Power
Current Rating (Amps) 10μA
Reach Compliance Code compliant
Frequency 2.66GHz
Operating Temperature (Max) 200°C
Configuration Single
Operating ModeENHANCEMENT MODE
Current - Test 1.8A
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 15dB
Power - Output 170W
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 643W
Voltage - Test 28V
RoHS StatusRoHS Compliant
In-Stock:4618 items

About PTFA261702E V1

The PTFA261702E V1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features IC FET RF LDMOS 170W H-30275-4.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the PTFA261702E V1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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