Name: BF256B
Brand: ON Semiconductor
SKU: BF256B
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Copper, Silver, Tin
Mount	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Number of Pins	3
Weight	200mg
Packaging	Bulk
Published	2015
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
HTS Code	8541.21.00.95
Subcategory	Other Transistors
Voltage - Rated DC	30V
Max Power Dissipation	350mW
Terminal Position	BOTTOM
Current Rating	13mA
Base Part Number	BF256
Number of Elements	1
Element Configuration	Single
Operating Mode	DEPLETION MODE
Power Dissipation	350mW
Transistor Application	AMPLIFIER
Drain to Source Voltage (Vdss)	30V
Transistor Type	N-Channel JFET
Continuous Drain Current (ID)	13mA
Gate to Source Voltage (Vgs)	-30V
FET Technology	JUNCTION
Highest Frequency Band	ULTRA HIGH FREQUENCY B
Height	4.58mm
Length	4.58mm
Width	3.86mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

BF256B Product Details

Description

The BF256B is an N-Channel RF Amplifier. A signal's power can be increased by an electronic device known as an amplifier, electronic amplifier, or (informally) amp (a time-varying voltage or current). It is a two-port electrical circuit that amplifies signals delivered to its input terminals using electricity from a power source to create signals with correspondingly increased amplitude at the output. The gain of an amplifier—that is, the ratio of output voltage, current, or power to input—is used to determine how much amplification it offers. A circuit with a power gain larger than one is referred to as an amplifier.