Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRLS4030TRLPBF

IRLS4030TRLPBF

IRLS4030TRLPBF

Infineon Technologies

IRLS4030TRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLS4030TRLPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2009
Series HEXFET®
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 3.9MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 370W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation370W
Turn On Delay Time74 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.3m Ω @ 110A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11360pF @ 50V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 4.5V
Rise Time330ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 170 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 180A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Nominal Vgs 2.5 V
Height 4.572mm
Length 10.668mm
Width 9.65mm
Radiation HardeningNo
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1850 items

Pricing & Ordering

QuantityUnit PriceExt. Price
800$2.23163$1785.304

IRLS4030TRLPBF Product Details

IRLS4030TRLPBF Description


IRLS4030TRLPBF is a 100V Single N-Channel HEXFET Power MOSFET. The Infineon IRLS4030TRLPBF is optimized for Logic Level Drive and broadest availability from distribution partners. The Power MOSFET IRLS4030TRLPBF can be applied in DC Motor Drive, High-Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High-Speed Power Switching, and Hard Switched and High-Frequency Circuits. The IRLS4030TRLPBF is offered in the D2-Pak package. It is specified for operation from –55°C to +175°C.



IRLS4030TRLPBF Features


  • Optimized for broadest availability from distribution partners

  • Product qualification according to JEDEC standard

  • Logic level: Optimized for 10 V gate-drive voltage (called normal level), and capable of being driven at 4.5 V gate-drive voltage

  • Industry-standard surface-mount power package

  • High-current carrying capability package (up to 195 A, die-size dependent)

  • Capable of being wave-soldered



IRLS4030TRLPBF Applications


  • DC Motor Drive

  • High-Efficiency Synchronous Rectification in SMPS

  • Uninterruptible Power Supply

  • High-Speed Power Switching

  • Hard Switched and High-Frequency Circuits


Get Subscriber

Enter Your Email Address, Get the Latest News