SI1012R-T1-GE3

SI1012R-T1-GE3 Overview

Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 600mA amps.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.0.5A is the drain current of this device, which is the maximum continuous current transistor can carry.Turn-Off delay time?is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 25 ns.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 5 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.In this case, the threshold voltage of the transistor is 800mV, which means that it will not activate any of its functions when its threshold voltage reaches 800mV.A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).

SI1012R-T1-GE3 Features

a continuous drain current (ID) of 600mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 25 ns
a threshold voltage of 800mV

SI1012R-T1-GE3 Applications

There are a lot of Vishay Siliconix SI1012R-T1-GE3 applications of single MOSFETs transistors.

• Telecom 1 Sever Power Supplies
• Battery Protection Circuit
• Consumer Appliances
• Micro Solar Inverter
• AC-DC Power Supply
• Motor drives and Uninterruptible Power Supplies
• Power Tools
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.
• General Purpose Interfacing Switch