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IPSA70R600P7SAKMA1

IPSA70R600P7SAKMA1

IPSA70R600P7SAKMA1

Infineon Technologies

N-Channel Tube 600m Ω @ 1.8A, 10V ±16V 364pF @ 400V 10.5nC @ 400V 700V TO-251-3 Short Leads, IPak, TO-251AA

SOT-23

IPSA70R600P7SAKMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-40°C~150°C TJ
PackagingTube
Series CoolMOS™ P7
Published 2014
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 43.1W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds 364pF @ 400V
Current - Continuous Drain (Id) @ 25°C 8.5A Tc
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 400V
Drain to Source Voltage (Vdss) 700V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±16V
Drain-source On Resistance-Max 0.6Ohm
Pulsed Drain Current-Max (IDM) 20.5A
DS Breakdown Voltage-Min 700V
RoHS StatusROHS3 Compliant
In-Stock:6044 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.95000$0.95
10$0.82900$8.29
100$0.63910$63.91
500$0.47344$236.72

IPSA70R600P7SAKMA1 Product Details

IPSA70R600P7SAKMA1 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 364pF @ 400V.Pulsed drain current is maximum rated peak drain current 20.5A.A normal operation of the DS requires keeping the breakdown voltage above 700V.This transistor requires a drain-source voltage (Vdss) of 700V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IPSA70R600P7SAKMA1 Features


based on its rated peak drain current 20.5A.
a 700V drain to source voltage (Vdss)


IPSA70R600P7SAKMA1 Applications


There are a lot of Infineon Technologies
IPSA70R600P7SAKMA1 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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