Name: IRLML6402TR
Brand: Infineon Technologies
SKU: IRLML6402TR
Availability: InStock

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IRLML6402TR

Manufacturer part number:IRLML6402TR

Manufacturer:Infineon Technologies

Description:IRLML6402TR datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLML6402TR Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Cut Tape (CT)
Published	2003
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G3
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	65m Ω @ 3.7A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	633pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3.7A Ta
Gate Charge (Qg) (Max) @ Vgs	12nC @ 5V
Drain to Source Voltage (Vdss)	20V
JEDEC-95 Code	TO-236AB
Drain Current-Max (Abs) (ID)	3.7A
Drain-source On Resistance-Max	0.065Ohm
Pulsed Drain Current-Max (IDM)	22A
DS Breakdown Voltage-Min	20V
Avalanche Energy Rating (Eas)	11 mJ
Power Dissipation-Max (Abs)	1.3W
RoHS Status	Non-RoHS Compliant

IRLML6402TR Product Details

IRLML6402TR Description

International Rectifier's P-Channel MOSFETs use innovative processing techniques to provide extraordinarily low onresistance per silicon area. This benefit, when paired with the high switching speed and ruggedized device design of HEXFET? power MOSFETs, gives the designer an extremely efficient and reliable device for battery and load control.