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NDF0610

NDF0610

NDF0610

ON Semiconductor

NDF0610 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NDF0610 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -50V
Technology MOSFET (Metal Oxide)
Current Rating-180mA
FET Type P-Channel
Rds On (Max) @ Id, Vgs 10 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.43nC @ 10V
Drain to Source Voltage (Vdss) 60V
Continuous Drain Current (ID) 180mA
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:1278 items

NDF0610 Product Details

NDF0610 Description


This high cell density, DMOS P-Channel enhancement mode power field effect transistor is made exclusively by Fairchild. The on-state resistance of this extremely high density technology has been reduced, and it offers durable, dependable performance and quick switching. They can deliver pulsed currents up to 1A and may be employed with little effort in the majority of applications requiring up to 180mA DC. This product is best suited for low voltage applications that need a high side switch with a low current.



NDF0610 Features


  • -0.18 and -0.12A, -60V. RDS(ON) = 10W

  • Voltage controlled p-channel small signal switch

  • High density cell design for low RDS(ON)

  • TO-92 and SOT-23 packages for both through hole and surface mount applications

  • High saturation current



NDF0610 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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