IRFS4127PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFS4127PBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2007
Series
HEXFET®
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
22MOhm
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
375W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
375W
Case Connection
DRAIN
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
22m Ω @ 44A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5380pF @ 50V
Current - Continuous Drain (Id) @ 25°C
72A Tc
Gate Charge (Qg) (Max) @ Vgs
150nC @ 10V
Rise Time
18ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
22 ns
Turn-Off Delay Time
56 ns
Continuous Drain Current (ID)
72A
Threshold Voltage
5V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Dual Supply Voltage
200V
Avalanche Energy Rating (Eas)
250 mJ
Nominal Vgs
5 V
Height
4.826mm
Length
10.668mm
Width
9.65mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1301 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.38000
$6.38
10
$5.72800
$57.28
100
$4.76060
$476.06
500
$3.92240
$1961.2
IRFS4127PBF Product Details
IRFS4127PBF Description
IRFS4127PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 200V. The operating temperature of IRFS4127PBF is -55°C~175°C TJ and its maximum power dissipation is 375W Tc. IRFS4127PBF has 3 pins and it is available in Tube packaging way. The Turn On Delay Time of IRFS4127PBF is 17 ns and its Turn-Off Delay Time is 56 ns.
IRFS4127PBF Features
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
IRFS4127PBF Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
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