Name: STP40NF03L
Brand: STMicroelectronics
SKU: STP40NF03L
Price: 1.12000 USD
Availability: InStock

new-10%

STP40NF03L

Manufacturer part number:STP40NF03L

Manufacturer:STMicroelectronics

Description:STP40NF03L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STP40NF03L Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	NRND (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	STripFET™
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	22mOhm
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Current Rating	40A
Base Part Number	STP40N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	70W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	70W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	22m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	770pF @ 25V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Rise Time	80ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	40A
Threshold Voltage	1.7V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	160A
Avalanche Energy Rating (Eas)	250 mJ
Height	9.15mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STP40NF03L Product Details

STP40NF03L Description

The latest evolution of STMicroelectronics' distinctive "single feature size" strip-based process is this Power MOSFET. The resulting transistor has a high packing density for low onresistance, tough avalanche properties, and fewer key alignment stages, resulting in exceptional manufacturing reproducibility.