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FDS6630A

FDS6630A

FDS6630A

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 38m Ω @ 6.5A, 10V ±20V 460pF @ 15V 7nC @ 5V 8-SOIC (0.154, 3.90mm Width)

SOT-23

FDS6630A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 130mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series PowerTrench®
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 38mOhm
Terminal Finish Tin (Sn)
Additional FeatureLOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Current Rating6.5A
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2.5W
Turn On Delay Time5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 38m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Gate Charge (Qg) (Max) @ Vgs 7nC @ 5V
Rise Time8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 6.5A
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Nominal Vgs 1.7 V
Height 1.575mm
Length 4.9mm
Width 3.9mm
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:25754 items

Pricing & Ordering

QuantityUnit PriceExt. Price

FDS6630A Product Details

FDS6630A Description


In order to reduce on-state resistance while maintaining exceptional switching performance, this N-Channel Logic Level MOSFET is made using the cutting-edge PowerTrench technology. Low in-line power loss and quick switching are required in low voltage and battery-powered applications, which are well suited for these devices.



FDS6630A Features


  • 6.5 A, 30 V

  • RDS(on) = 0.038 Ω@ VGS = 10 V

  • RDS(on) = 0.053 Ω @ VGS = 4.5 V

  • Low gate charge (5nC typical)

  • Fast switching speed

  • High performance trench technology for extremely low RDS(ON)

  • High power and current handling capability



FDS6630A Applications


  • This product is general usage and suitable for many different applications.

  • DC/DC Converters

  • Load Switch

  • Motor Drives


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