Name: IRL1004PBF
Brand: Infineon Technologies
SKU: IRL1004PBF
Price: 3.31000 USD
Availability: InStock

new-10%

IRL1004PBF

Manufacturer part number:IRL1004PBF

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tube 6.5m Ω @ 78A, 10V ±16V 5330pF @ 25V 100nC @ 4.5V TO-220-3

Case Package:SOT-23

Datasheet:IRL1004PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	HEXFET®
Published	2004
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	6.5mOhm
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	40V
Technology	MOSFET (Metal Oxide)
Current Rating	130A
Number of Elements	1
Power Dissipation-Max	200W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	200W
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.5m Ω @ 78A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5330pF @ 25V
Current - Continuous Drain (Id) @ 25°C	130A Tc
Gate Charge (Qg) (Max) @ Vgs	100nC @ 4.5V
Rise Time	210ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	130A
Threshold Voltage	1V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	520A
Dual Supply Voltage	40V
Avalanche Energy Rating (Eas)	700 mJ
Nominal Vgs	1 V
Height	8.77mm
Length	10.6426mm
Width	4.82mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRL1004PBF Product Details

IRL1004PBF Description

The IRL1004PBF is a fifth-generation N-channel Power MOSFET from the HEXFET? brand that uses cutting-edge manufacturing methods to achieve the lowest possible ON-resistance per silicon area—combining this advantage with the quick switching time and ruggedized device design results in very efficient and dependable functioning. At power dissipation levels of up to 50W, the package is overwhelmingly favored for all commercial and industrial applications.