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FDP070AN06A0

FDP070AN06A0

FDP070AN06A0

ON Semiconductor

FDP070AN06A0 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDP070AN06A0 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating80A
Number of Elements 1
Power Dissipation-Max 175W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation175W
Case Connection DRAIN
Turn On Delay Time12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Rise Time159ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.007Ohm
Drain to Source Breakdown Voltage 60V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7330 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.600098$1.600098
10$1.509526$15.09526
100$1.424082$142.4082
500$1.343473$671.7365
1000$1.267427$1267.427

FDP070AN06A0 Product Details

FDP070AN06A0 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3000pF @ 25V is its maximum input capacitance.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.Drain-source breakdown voltage is?the VDS at which a specified value of ID flows, with VGS=60V.?And this device has 60V drain to source breakdown voltage.When the device is turned off, a turn-off delay time of 27 ns occurs as the input capacitance charges before drain current conduction commences.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.In addition to reducing power consumption, this device uses drive voltage (10V).

FDP070AN06A0 Features


a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 27 ns

FDP070AN06A0 Applications


There are a lot of ON Semiconductor FDP070AN06A0 applications of single MOSFETs transistors.

  • LCD/LED/ PDP TV Lighting
  • Industrial Power Supplies
  • DC/DC converters
  • Micro Solar Inverter
  • Solar Inverter
  • Server power supplies
  • Motor Drives and Uninterruptible Power Supples
  • Motor control
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • LCD/LED TV

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